60612 tkim/62005ac msim tb-00001552/22802 tsim ta-49 no.7177-1/8 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 cph5905 n-channel jfet and npn bipolar transistor 15v, 10 to 32ma, 50v, 150ma, composite type, cph5 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. ordering number : EN7177B features ? composite type with j-fet and npn transistors contained in the cph5 package, improving the mounting ef ciency greatly ? the cph5905 contains a 2sk3357-equivalent chip and a 2sc4639-equivalent chip in one package ? drain and emitter are shared speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit [fet] drain-to-source voltage v dsx 15 v gate-to-drain voltage v gds --15 v gate current i g 10 ma drain current i d 50 ma allowable power dissipation p d mounted on a ceramic board (600mm 2 0.8mm) 350 mw [tr] collector-to-base voltage v cbo 55 v collector-to-emitter voltage v ceo 50 v emitter-to-base voltage v ebo 6v collector current i c 150 ma collector current (pulse) i cp 300 ma base current i b 30 ma collector dissipation p c mounted on a ceramic board (600mm 2 0.8mm) 350 mw [tr] total power dissipation p t mounted on a ceramic board (600mm 2 0.8mm) 500 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7017a-007 product & package information ? package : cph5 ? jeita, jedec : sc-74a, sot-25 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 1 : collector 2 : gate 3 : source 4 : emitter/drain 5 : base cph5 2 1 4 53 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 1e lot no. rank tl cph5905g-tl-e cph5905h-tl-e 5 3 12 4
cph5905 no.7177-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [fet] gate-to-drain breakdown voltage v (br)gds i g =--10 a, v gs =0v --15 v gate cutoff current i gss v gs =--10v, v ds =0v --1.0 na cutoff voltage v gs (off) v ds =5v, i d =100 a --0.4 --0.7 --1.5 v drain current i dss v ds =5v, v gs =0v 10.0* 32.0* ma forward transfer admittance | yfs | v ds =5v, v gs =0v, f=1khz 24 35 ms input capacitance ciss v ds =5v, v gs =0v, f=1khz 10.0 pf reverse transfer capacitance crss v ds =5v, v gs =0v, f=1khzz 2.9 pf noise figure nf v ds =5v, rg=1k , i d =1ma, f=1khz 1.0 db [tr] collector cutoff current i cbo v cb =35v, i e =0a 0.1 a emitter cutoff current i ebo v eb =4v, i c =0a 0.1 a dc current gain h fe v ce =6v, i c =1ma 135 400 gain-bandwidth product f t v ce =6v, i c =10ma 200 mhz output capacitance cob v cb =6v, f=1mhz 1.7 pf collector-to-emitter saturation voltage v ce (sat) i c =50ma, i b =5ma 0.08 0.4 mv base-to-emitter saturation voltage v be (sat) i c =50ma, i b =5ma 0.8 1.0 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 55 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 50 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 6 v turn-on time t on see speci ed test circuit. 0.15 ns storage time t stg 0.75 ns fall time t f 0.20 ns * : the cph5905 is classi ed by i dss as follows : (unit : ma) rank g h i dss 10.0 to 20.0 16.0 to 32.0 the speci cations shown above are for each individual fet or transistor. switching time test circuit ordering information device package shipping memo cph5905g-tl-e cph5 3,000pcs./reel pb free cph5905h-tl-e cph5 3,000pcs./reel v r 1k v cc =20v v be = --5v + + 50 input outpu t r l 2k 220 f 470 f pc=20 s i b1 d.c. 1% i b2 10i b1 = --10i b2 =i c =10ma
cph5905 no.7177-3/8 0 0 i d -- v ds 20 16 12 8 4 0.4 0.8 1.2 1.6 2.0 2.4 itr02749 i d -- v ds --0.1v v gs =0v --0.2v --0.3v --0.4v --0.5v --0.6v --0.7v 0 0 20 16 12 8 4 24681012 --0.1v v gs =0v --0.2v --0.3v --0.4v - -0.5v --0.6v --0.7v itr02750 drain-to-source voltage, v ds -- v drain-to-source voltage, v ds -- v drain current, i d -- ma drain current, i d -- ma [fet] [fet] it04227 ciss -- v ds it04228 v gs (off) -- i dss 7 10 23 5 3 3 2 1.0 7 5 v ds =5v i d =100 a 72357 23 3 3 1.0 10 10 5 7 2 v gs =0v f=1mhz drain current, i dss -- ma cutoff voltage, v gs (off) -- v drain-to-source voltage, v ds -- v input capacitance, ciss -- pf [fet] [fet] i d -- v gs it04224 i d -- v gs itr02752 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2 0 22 20 18 16 14 12 10 8 6 4 2 20ma i dss =30ma 15ma 10ma --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2 0 4 2 6 8 12 10 14 16 75 c v ds =5v i dss =15ma 25 c ta=--25 c v ds =5v gate-to-source voltage, v gs -- v [fet] [fet] drain current, i d -- ma gate-to-source voltage, v gs -- v drain current, i d -- ma | y fs | -- i d it04225 | y fs | -- i dss it04226 10 5 3 7 2 3 5 7 3 1.0 10 7 5235723 5 2 v ds =5v f=1khz i dss =15ma 30ma 7 10 23 5 10 2 3 5 7 100 v ds =5v v gs =0v f=1khz [fet] [fet] drain current, i d -- ma forward transfer admittance, | yfs | -- ms drain current, i dss -- ma forward transfer admittance, | yfs | -- ms
cph5905 no.7177-4/8 crss -- v ds it04229 nf -- f itr02758 73 5 10 1.0 2 10 2 357 7 5 3 2 1.0 7 v ds =0v f=1mhz 10 8 6 4 2 0.01 2 0.1 1.0 10 100 0 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 v ds =5v i d =1ma rg=1k drain-to-source voltage, v ds -- v reverse transfer capacitance, crss -- pf frequency, f -- khz noise figure, nf -- db [fet] [fet] 50 30 20 40 10 45 25 15 35 5 0 0 0.4 1.0 0.8 0.6 0.2 0.3 0.9 0.7 0.5 0.1 i c -- v ce [tr] [tr] [tr] [tr] 50 a 100 a 150 a 200 a 250 a 300 a 350 a 400 a 450 a 500 a itr10376 020 50 40 10 30 15 45 35 525 i c -- v ce itr10377 12 10 6 4 8 2 0 ta=75 c --25 c 100 3 2 7 5 1000 2 7 5 3 0.1 3 25 1.0 3 23 25 100 3 2 5 10 h fe -- i c 25 c v ce =6v itr10379 ta=75 c --25 c 160 120 140 20 80 100 40 60 0 v ce =6v 25 c 0 0.2 0.4 0.8 0.6 1.0 1.4 1.2 i c -- v be itr10378 i b =0 a 10 a 15 a 20 a 25 a 30 a 35 a 40 a 45 a 50 a 5 a i b =0 a collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector-to-emitter voltage, v ce -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma collector current, i c -- ma dc current gain, h fe nf -- rg itr02759 it09866 p d -- ta 10 8 6 4 2 0.1 2 1.0 10 100 1000 0 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 v ds =5v i d =1ma f=1khz signal source resistance, rg -- k noise figure, nf -- db ambient temperature, ta -- c allowable power dissipation, p d -- mw [fet] [fet] 0 20 40 60 80 100 120 140 160 0 100 50 200 300 150 250 350 400 mounted on a ceramic board (600mm 2 ? 0.8mm)
cph5905 no.7177-5/8 [tr] [tr] 3 100 2 5 7 3 2 5 7 1.0 10 52 7 3 2 100 57 3 2 3 1.0 10 2 3 2 5 5 7 1.0 10 57 57 3 2 f t -- i c itr10380 cib -- v eb itr10381 v ce =6v f=1mhz collector current, i c -- ma gain-bandwidth product, f t -- mhz emitter-to-base voltage, v eb -- v input capacitance, cib -- pf p c -- ta it09867 [tr] [tr] 1.0 7 23 5 7 22 35 10 100 5 3 1.0 10 7 5 3 2 7 v be (sat) -- i c i c / i b =10 itr10384 75 c ta= --25 c 25 c [tr] [tr] 3 10 2 3 2 5 5 7 1.0 5 7 1.0 10 57 57 3 2 100 57 3 2 cob -- v cb itr10382 f=1mhz 1.0 7 23 5 7 22 35 10 100 5 3 2 0.1 1.0 7 5 3 2 3 2 7 v ce (sat) -- i c i c / i b =10 itr10383 25 c ta=75 c --25 c collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v ambient temperature, ta -- c collector dissipation, p c -- mw 0 20 40 60 80 100 120 140 160 0 100 50 200 300 150 250 350 400 mounted on a ceramic board (600mm 2 ? 0.8mm)
cph5905 no.7177-6/8 embossed taping speci cation cph5905g-tl-e, cph5905h-tl-e
cph5905 no.7177-7/8 outline drawing land pattern example cph5905g-tl-e, cph5905h-tl-e mass (g) unit 0.02 * for reference mm unit: mm 0.6 2.4 1.4 0.95 0.95
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